Performance analysis of carrier depletion silicon PIN phase shifter
نویسندگان
چکیده
منابع مشابه
Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.
Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to...
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ژورنال
عنوان ژورنال: Journal of Optical Communications
سال: 2020
ISSN: 2191-6322,0173-4911
DOI: 10.1515/joc-2019-0259